[UCI-Calit2] Upcoming Lecture: Atomic Layer Deposition of Aluminum Oxide

Anna Lynn Spitzer aspitzer at calit2.uci.edu
Fri Jun 15 11:56:45 PDT 2007


Title:                           Atomic Layer Deposition of Aluminum
Oxide on Alkanethiolate Self-assembled Monolayers: Explicit Control of
Surface Wetting

 

Speaker:                    Nobuhiko "Nobby" P. Kobayashi, Jack Baskin
School of Engineering, University of California, Santa Cruz and Quantum
Science Research, Hewlett-Packard Laboratories, Palo Alto

 

Time:                          2 p.m.

 

Date:                           Friday, June 22, 2007

 

Location:                    Calit2 Building, Room 3008

 

Abstract:                     Aluminum oxide was deposited at low
temperatures by atomic layer deposition onto an atomically smooth gold
surface coated with a CH3-terminated alkanethiolate self-assembled
monolayer (SAM) and onto an OH-terminated silicon dioxide surface. The
growth of the resulting films was characterized with
reflection-absorption infrared spectroscopy, water contact-angle
measurement, and atomic force microscope. Aluminum oxide films on the
SAMs exhibited growth instability, resulting in a rough surface
morphology, while the films on the OH-terminated silicon dioxide
maintained an atomically smooth surface. The growth instability was
further investigated in the view of developing a route for smooth AlOx
onto the SAMs by a two-stage ALD process; the first stage utilized
n-propanol as the oxygen source and the second proceeded with water. The
optimized ALD process significantly improved the surface morphology of
AlOx films and effectively protected the structural integrity of
underlying SAMs.

 

Bio:                             Kobayashi has been affiliated with the
Jack Basking School of Engineering at the University of California,
Santa Cruz since April 2007. His current research interests include
physics, synthesis, and characterization of nano-scale materials and
nano-scale electronic, optoelectronic, and photonic devices. He is also
affiliated with Quantum Science Research at Hewlett-Packard Laboratories
as a visiting scholar. Prior to joining UCSC, he was developing core
structures and materials for a new class of nano-meter scale electrical
switches/memories for future computing systems at Hewlett-Packard
Laboratories. He was also working on functional integration of group
III-V compound semiconductors onto silicon platforms for the
next-generation electronics/optoelectronic applications including
advanced CMOS and solar cells. Prior to his current appointments, he was
involved in research on optoelectronics and biosensing applications
based on nanostructures of group III-V compound semiconductors at UC
Berkeley. Kobayashi also worked at the Center for Micro and Nano
Technology at Lawrence Livermore National Laboratory from 2002 to 2004
as a scientist, developing semiconductor materials used in both
ultra-high speed diagnosis systems for the National Ignition Facility
and optoelectronic components for the Optical Code Division Multiple
Access (DARPA funded project). From 1999 to 2001, Kobayashi was at
Agilent Laboratories (former Hewlett-Packard Laboratories) involved in
developing III-V compound semiconductor materials for superior
optoelectronic and electronic components, such as LEDs, VCSELs, and
hetero-bipolar transistors, for both high-speed fiber-optics and
wireless communications. Before coming to the U.S. in 1992, Kobayashi
worked for HONDA R&D Co. Ltd. (Saitama, Japan) and Toshiba Co.
(Yokohama, Japan), developing III-V compound semiconductors and
amorphous semiconductors for solar cells, photodetectors, and MOS
transistors. He earned his bachelor's degree in electrical engineering
from Aoyama Gakuin University (Tokyo), and his master's and doctorate
degrees in material science from the University of Southern California
in 1998.

 

Faculty Sponsor:                   Albert Yee

 

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